1 AM4910N analog power preliminary publication order number: ds-am4910_f these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds ( on ) m( ? )i d (a) 13.5 @ v gs = 10v 10 20 @ v gs = 4.5v 8 product summary 30 dual n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol limit units v ds 30 v gs 20 t a =25 o c10 t a =70 o c8.2 i dm 50 i s 2.3 a t a =25 o c2.1 t a =70 o c1.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units maximum junction-to-case a t <= 5 sec r jc 40 o c/w maximum junction-to-ambient a t <= 5 sec r ja 60 o c/w thermal resistance ratings parameter
2 AM4910N analog power preliminary publication order number: ds-am4910_f notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 ua 30 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 10 a 13.5 v gs = 4.5 v, i d = 8 a 20 v gs = 10 v, i d = 15 a, t j = 55 o c15 forward tranconductance a g fs v ds = 15 v, i d = 10 a 40 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v pulsed source current (body diode) a i sm 5 a total gate charge q g 20 gate-source charge q g s 7.0 gate-drain charge q gd 7.0 turn-on delay time t d ( on ) 20 rise time t r 9 turn-off delay time t d(off) 70 fall-time t f 20 ns drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = 25 v, r l = 25 ? , i d = 1 a, v gen = 10 v v ds = 15 v, v gs = 5 v, i d = 10 a nc dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v test conditions symbol
3 AM4910N analog power preliminary publication order number: ds-am4910_f typical electrical characteristics (n-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 1. on-region characteristics 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10v i d = 10a 0 10 20 30 40 50 60 0 1234 56 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 12 5 c -55c v d =5v 0 10 20 30 40 50 00.511.52 vds, drain-source volt age (v) id, drain current (a) 3.0v 6.0v 4.0v v gs = 10v 0.5 0.8 1.1 1.4 1.7 2 0 1020304050 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 10v 6.0v 0 0.01 0.02 0.03 0.04 0.05 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm) i d = 10a t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward voltage (v) is, reverse drain current (a) t a = 125 o c 25 o c v gs = 0v
4 AM4910N analog power preliminary publication order number: ds-am4910_f typical electrical characteristics (n-channel) figure 11. transient th ermal response curve figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient square wave pulse duration (s) figure 9. threshold vs ambient temperature 0 400 800 1200 1600 0 5 10 15 20 25 30 vds, drain to source voltage (v) capacitance (pf ) ciss crss coss f = 1mhz v gs = 0 v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) vth, gate-source thresthold voltag e (v) v ds = v gs i d = 250ma 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r qja (t) = r(t) * r qja r qja = 125 c/w t j - t a = p * r qja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0 2 4 6 8 10 0 4 8 12 16 20 24 qg, gate charge (nc) vgs gate to source voltage ( v ) figure 7. gate charge characteristics i d =10a
5 AM4910N analog power preliminary publication order number: ds-am4910_f package information so-8: 8lead h x 45
6 AM4910N analog power preliminary publication order number: ds-am4910_f ordering information ? AM4910N-t1-xx ?a: analog power ? m: mosfet ? 4910: part number ? n: n-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree
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